Method and apparatus for wavelength calibration

ABSTRACT

A wavelength calibration system determines an absolute wavelength of a narrowed spectral emission band of an excimer or molecular laser system. The system includes a module including an element which optically interacts with a component of an output beam of the laser within the tunable range of the laser system around the narrowed band. An inter-level resonance is detected by monitoring changes in voltage within the module, or photo-absorption is detected by photodetecting equipment. The absolute wavelength of the narrowed band is precisely determinable when the optical transitions occur and are detected. When the system specifically includes an ArF-excimer laser chamber, the module is preferably a galvatron containing an element that photo-absorbs around 193 nm and the element is preferably a gas or vapor selected from the group consisting of arsenic, carbon, oxygen, iron, gaseous hydrocarbons, halogenized hydrocarbons, carbon-contaminated inert gases, germanium and platinum vapor. When the system specifically includes F 2 -laser chamber, the module is preferably a galvatron containing an element that photo-absorbs around 157 nm and the element is preferably a gas or vapor selected from the group consisting of selenium, bromine and silicon. The module is alternatively a purge chamber configurable for purging with a photo-absorbing gas.

PRIORITY

[This application is a Rule 1,53(b) Continuation of U.S. patentapplication Ser. No. 09/679,592, filed Oct. 4, 2000, now U.S. Pat. No.6,272,158 Which is a Contintuation of U.S. patent application Ser. No.09/416,344, filed Oct. 12, 1999, now U.S. Pat. No. 6,160,832, which is aContinuation-in-Part application claiming the benefit of priority toU.S. patent application Ser. No. 09/088,622, filed on Jun. 1, 1998, nowabandoned, and to U.S. patent application Ser. No. 09/136,275, filed onAug. 19, 1998, now abandoned.]

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a wavelength calibration module andtechnique, and particularly to an absolute wavelength calibration modulewhich optically absorbs at known wavelengths and detects such opticalabsorption when a narrowed emission band of an excimer or molecularlaser is incident on the module.

2. Discussion of the Related Art

Excimer lasers emitting pulsed UV-radiation are becoming increasinglyimportant instruments in specialized material processing. TheKrF-excimer laser emitting around 248 nm and the ArF-excimer laseremitting around 193 nm are rapidly becoming the light sources of choicefor photolithographic processing of integrated circuit devices (IC's).The F₂-laser is also being developed for such usage and emits lightaround 157 nm.

It is important for their respective applications to the field ofsubmicron silicon processing that each of the above excimer lasersystems become capable of emitting a narrow spectral band around a veryprecisely determined and finely adjustable absolute wavelength.Techniques for reducing bandwidths by special resonator designs to lessthan 100 pm, and in some cases to less than 1 pm, are well known.Techniques are also available for tuning and controlling centralwavelengths of emission. However, most of these techniques do notaccurately determine absolute wavelengths and only serve to relativelytune and control wavelengths. Moreover, even relative wavelength changescannot be as precisely determined as is desired, using these techniques.

It is possible to roughly determine an absolute wavelength or a changein wavelength from a reference wavelength as a spectral band is tuned,when particular incremental settings of a spectrograph are calibrated tocorrespond to absolute wavelengths in conventional units, e.g., innanometers. However, conventional techniques do not provide very preciseabsolute wavelength and incremental wavelength change information at anytime. This is because a conventional spectrograph often must undergo alaborious conventional calibration technique. Moreover, optical driftand other optical, thermal and electronic phenomena produce uncertaintyand imprecision at all times following the calibration procedure,including during operation of the system. Further, wavelengthcalibration is usually done externally to the operating beam path of thesystem using high resolution spectrographs in combination with spectralreference tools for wavelength calibration, e.g., spectral lampsemitting particular narrow lines. Therefore, very precise and temporallyadvantageous absolute wavelength determination and fine tuning methodsare needed.

Specifically, it is desired to have absolute wavelength calibrationtechniques for UV-emitting excimer and molecular lasers havingaccuracies within a range of ±0.25 pm, while having tuning versatilitycomprising wavelength ranges from ±5 pm to greater than ±100 pmdepending on properties of available illumination tools for ICproduction. There are available techniques for accurately determiningthe absolute wavelength of a narrow band KrF-excimer laser emissionusing narrow spectral absorption lines of certain elements to calibratea high resolution spectrometer. Among these available techniques, atomictransition(s) of iron (Fe) at 248.327 and/or 248.4185 nm are used todetect absorption signals either by reduced optical transmission orusing the opto-galvanic effect. See U.S. Pat. No. 4,823,354 to Znotinset al.; U.S. Pat. No. 5,450,207 to Fomenkov; F. Babin et al., Opt.Lett., v. 12, p. 486 (1987); See also R. B. Green et al., Appl. Phys.Lett., v. 29, p. 727 (1976) (describing galvanic detection of opticalabsorptions in a gas discharge for various gases including lithium (Li),sodium (Na), uranium (U) and barium (Ba)).

Babin et al. discloses using the opto-galvanic effect to determine theKrF-laser absolute emission wavelength. A galvatron having an anode anda cathode is set in the optical path of the laser beam. An Fe vaporfills the galvatron. A voltage is monitored between the cathode andanode. The emission wavelength of the laser is narrowed and tuned arange around 248 nm. When the wavelength of the beam impinging theFe-vapor filled gas volume between the cathode and the anode correspondsto an atomic transition of Fe, a resonance between the levels causes amarked change in voltage between the anode and cathode. Since theabsorption lines of Fe are well known and consistent, the absolutewavelength of the narrowed laser emission band is determinable.

Znotins et al. and Fomenkov each disclose using a photodetector todetect the intensity of light emitted from a KrF-laser. Znotins et al.discloses to use a galvatron having benzene vapor inside. Fomenkovdiscloses to use a galvatron having an Fe cathode inside. The cathode ofFomenkov gives off Fe vapor which fills the galvatron when a current isgenerated between the cathode and an associated anode. Light emittedfrom the KrF-laser traverses the gaseous benzene or iron medium of thegalvatron before impinging the photodetector. When the wavelengthcorresponds to an atomic transition of the gas medium of the galvatron,the gas absorbs the light, and the intensity of light detected isreduced. Thus, the absolute wavelength of emission of the KrF-laser isdeterminable in also determinable in this alternative way.

The opto-galvanic effect described by Babin et al. and acknowledged byFomenkov permits a very precise and reliable determination of anabsolute emission wavelength of a KrF-excimer laser system. See U.S.Pat. No. 4,905,243 to Lokai et al. A known technique uses sealed hollowcathode lamps containing Fe-vapor in a Ne-buffer gas environment. SeeHammamatsu Datasheet: Opto-Galvanic Sensor, Galvatron L 2783 Series,November 89, Japan. Thus, the Fe-lamp has become an important andreliable measuring tool for absolute wavelength calibration forKrF-lithography laser systems in the 248 nm spectral region.

SUMMARY OF THE INVENTION

It is desired to have absolute wavelength calibration capability forexcimer and molecular fluorine laser systems, and particularly forArF-lithography laser systems emitting in the 193 nm spectral region, aswell as for F₂ lithography laser systems emitting in the 157 nm spectralregion, having a precision of ±0.25 pm. It is further desired to havetuning versatility for ArF-laser systems in a range from around 192.5 to194 nm, and more particularly from around 193.0 to 193.6 nm, whilemaintaining precise absolute wavelength calibration. It is also desiredto have a calibration technique for an excimer or molecular fluorinelaser system that is fast and reliable and is easily performed withoutcomplicated additional optical alignment of the beam path, such as oneutilizing a spectral reference tool which is fixed and integrated intothe optical beam path of the system.

The present invention encompasses these desired features and others byproviding a system having a wavelength calibration module for measuringan absolute wavelength of a narrowed spectral emission band of anexcimer or molecular laser such as an ArF-excimer laser system or amolecular fluorine (F₂) laser. The narrowed spectral emission interactswith the module at one or more specific absolute wavelengths and effectsof the interactions are detected, when a component of the narrowedemission is directed through the module at the one or more absolutewavelengths. The absolute wavelength of the narrowed spectral emissionis precisely determined when the effects of the interaction aredetected. For the ArF-excimer laser system, the module contains anelement having a level-transition line around 193 nm and is preferably agaseous vapor selected from the group of materials consisting ofarsenic, gaseous hydrocarbons, halogenized hydrocarbons, carboncontaminated inert gases, carbon, oxygen, germanium, and platinum vapor,as well as other metal vapors including iron. For the F₂-laser system,the module contains an element having a level-transition line around 157nm and is preferably a gaseous vapor selected from the group ofmaterials consisting of gaseous hydrocarbons, halogenized hydrocarbons,oxygen, selenium, bromine and silicon.

The present invention further encompasses the above desired features andothers by preferably providing a galvatron having a cathode and an anodeas the wavelength calibration module. Preferably, the narrowed emissionis directed toward the galvatron and voltage changes are detectedbetween the cathode and anode of the galvatron due to opto-galvanicresonance effects when the narrowed emission is tuned within thebroadband ArF-excimer laser emission spectrum or within the F₂-laseremission spectrum. Alternatively, a photodetector is aligned to monitorthe intensity of light traversing the gaseous medium of the galvatron asthe wavelength of the light in tuned; the detected intensity showingmarked reduction around absorption-transition lines of the gaseousmedium. The absolute wavelength of the narrowed emission is thenprecisely determined anywhere within the broadband spectrum.

The system preferably further includes an ArF-excimer or molecularfluorine laser chamber and optical resonator, a spectral narrowing andtuning unit, and a detection and control unit for relative wavelengthdetection, control and tuning. The narrow spectral emission band of theArF- or F₂-laser is directed through an output coupling mirror of theoptical resonator and toward the wavelength calibration module.

In another embodiment, a wavelength calibration system is provided formeasuring an absolute wavelength of a narrowed spectral emission band ofan excimer or molecular laser. In this embodiment, the excimer ormolecular laser is preferably selected from the group of lasersconsisting of a KrF laser, an ArF laser and a F₂ laser. The alternativesystem includes a purge chamber filled with a photo-absorbing elementenclosing optical elements of the system. The photo-absorbing element ispreferably oxygen gas or iron metal vapors when the system includes anArF-excimer laser chamber. Reduction in intensity are observed andmeasured when the narrowed spectral emission band of the laser is tunedthrough a photo-absorption line of the photo-absorbing element. Thepurge chamber is purgeable with an inert gas such as argon or nitrogengas for converting the calibration system into a clean output laser beamenclosure, and vice-versa.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1a schematically shows a narrow band ArF-excimer laser systemaccording to a first embodiment of the present invention.

FIG. 1b schematically shows a narrow band ArF-excimer laser systemaccording to a second embodiment of the present invention.

FIG. 2 is a graph showing absorption coefficients of oxygen versuswavelength in the 193 nm spectral region detected by the setup of thesecond embodiment of FIG. 1b.

FIG. 3 is a graph showing absorption signal versus wavelength of acarbon hollow cathode lamp showing three absorption lines of neutralcarbon.

FIG. 4 shows a wavelength calibration module of the systems of FIGS. 1aand 1 b.

FIG. 5 shows a broadband ArF-laser emission spectrum indicating someabsorption lines of oxygen and carbon.

FIG. 6 is a graph illustrating a process for absolute wavelengthcalibration and tuning according to the preferred embodiment of FIG. 1.

FIG. 7 schematically shows a narrow band ArF-excimer laser systemaccording to a third embodiment of the present invention.

FIG. 8 shows carbon transition lines within the tuning range of anArF-excimer laser, where the carbon hollow cathode is doped by oxides.

FIG. 9 schematically shows a beam splitter arrangement for reflecting aportion of the main beam towards a calibration module.

FIG. 10 schematically shows a beam splitter and mirror arrangement forreflecting a portion of the main beam towards a calibration module in amanner such that the beam portion passes through the calibration modulemore than once.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT

A narrow band ArF-excimer laser system according to a first embodimentof the present invention is shown in FIG. 1a and described below. AnArF-excimer laser chamber 1 emitting around 193 nm is surrounded byvarious optical and electrical components. The laser chamber 1 normallyhas tilted windows, e.g., at Brewster's angle. The laser system includesa resonator comprising a highly reflective mirror 10, a polarizer 13, abeam splitter 9 a and a wavelength narrowing and tuning block 5. Thesystem further includes a wavelength calibration system including awavelength calibration module 2.

The discussion of the preferred embodiment with respect to theArF-excimer laser applies similarly throughout to the molecular fluorine(F₂) laser, and when necessary, important differences will be described.The main difference for the purposes of the present invention is thatthe F₂-laser emits around 157 nm, and not around 193 nm. Thus, thewavelength calibration system for the F₂-laser will be sensitive toradiation around 157 nm, whereas that for the ArF-excimer laser systemwill be sensitive around 193 nm. Also, except where discussed withrespect to wavelength calibration according to the present invention,species such as water vapor and oxygen that strongly photoabsorb around157 nm will be substantially removed from the optical path of any 157 nmradiation, whereas such substantial removal may or may not be performedin the case of 193 nm radiation. In addition, various species willinteract differently with incident 193 nm and 157 nm radiation.

The wavelength calibration module 2 contains or comprises an element 21which has an energy level transition line or lines around 193 nm. Anenergy level transition line is a detected atomic or moleculartransition between atomic, electronic or molecular energy states of anelement 21. An optical transition is one caused, facilitated, orstimulated by interaction of the atom or molecule with a photon oflight. Examples of interactions involving optical transitions includeabsorption, emission, Raman scattering, and stimulated emission.

The element 21 is preferably a gaseous vapor contained within a hollowcathode lamp 2. Vaporous species that may be used as the element 21within the module 2 have lines around 193 nm. Some of those speciesinclude arsenic (193.696 nm), germanium (193.750 nm), carbon (193.0905nm, and other lines), iron, platinum, gaseous hydrocarbons, halogenizedhydrocarbons and carbon-contaminated inert gases. In addition, oxygenmay be used as the element 21 and has several optical transition lineswithin the broadband emission spectrum of the ArF-laser. FIGS. 2 and 3show exemplary graphs of photo-absorption coefficients of oxygen andcarbon around 193 nm, respectively. Other species, in addition to thosementioned above, that have detectable level-transition lines within thebroadband emission spectrum, such as that shown in FIG. 5 for anArF-excimer laser, may be used as the element 21 contained within thewavelength calibration module 2. Quasi-transparent crystals and liquidsthat exhibit transition lines around 193 nm may also be used.

FIG. 4 shows a galvatron which is an example of a wavelength calibrationmodule 2. The galvatron is filled, and may be purged, with the element21 in gaseous form. A laser beam portion may enter and/or exit themodule through Brewster windows. A cathode 22 inside the galvatron maycomprise the element 21 in solid form, and then release the element ingaseous form when a current is generated between the cathode 22 and itsassociated anode 23 inside the galvatron. Laser light from the laserchamber passes through the cathode 22 causing an inter-level resonanceof the gaseous species when the wavelength of the laser lightcorresponds to an inter-level transition energy of the element 21. Amarked voltage change is detected between the cathode 22 and the anode23 when the laser light is tuned to these particular wavelength(s).Therefore, when the beam has a wavelength which corresponds to an energylevel transition of the gaseous species 21 within the galvatron, avoltage change is detected and the absolute wavelength of the narrowedband is then determinable.

The galvatron may be used in a different way as shown in FIG. 1b. FIG.1b includes the setup of FIG. 1a and additionally includes aphotodetector arranged near the galvatron. In the system of FIG. 1b, thegalvatron serves as a module 2 filled with the element 21 in gaseousform, as described above. The gaseous element 21 may be caused to fillthe galvatron by forming the cathode 22 of the galvatron out of theelement 21 in solid form, and running a current between the anode 23 andthe cathode 22 of sufficient amplitude to sublimate the element 21.

The voltage across the anode and cathode are not monitored in the systemof FIG. 1b, as they are with the system of FIG. 1a (i.e., for thepurpose of detecting energy level resonances in species of the element21 induced by the incident light). Instead, the intensity of the lightas it passes through the galvatron is detected. By so doing, absorptionlines of the element 21 are detected when the detected intensity isreduced below that which is expected at the wavelengths corresponding tothe absorption lines. Since the absolute wavelengths of photoabsorptionare known for the element 21, the absolute wavelength of the laser lightis determinable.

For the F₂-laser emitting around 157 nm, different photoabsorbingspecies may be used. These species include selenium (157.530 nm),bromine (157.484 nm and 157.639 nm) and silicon. At the same time,arsenic, germanium, carbon and platinum are not used for wavelengthcalibration of the F₂-laser. The preferred species is bromine becausethe relative intensity of absorption of each of the 157.484 nm and157.639 nm lines is very strong. For example, the relative intensity ofabsorption of each of these lines is as much as 100 to 200 timesstronger than the selenium line.

Another advantage of bromine is its two lines, instead of one, allowingmore versatility in the way absolute wavelength detection is performedfor the F₂ laser, as is better understood after reading the descriptionsbelow. The 157.484 nm absorption line of bromine is near the 157.523 nmemission line of the F₂ laser, while the 157.639 nm absorption line ofbromine is near the 157.629 nm emission line of the F₂ laser. Even ifone of the F₂ emission lines is selected to obtain a very narrowlinewidth output beam (see, e.g., U.S. patent applications Nos.09/317,695 and 09/317,527, which are each assigned to the same assigneeas the present application, and which are hereby incorporated byreference into the present application), use of bromine allows absolutewavelength calibration to be performed when either of the two closelyspaced F₂ laser emission lines is selected.

The wavelength of the laser light is determined from a knowledge of theenergy band levels and transition probabilities of species of thegaseous element 21. That is, when the wavelength of the laser beam istuned through the broadband spectrum of FIG. 5, the absolute wavelengthof the beam is precisely determined each time it corresponds to aninter-level transition energy of the gaseous species 21 having a finitetransition probability density. The absolute wavelengths of thetransition level resonance modes are precisely and reliably known sincethey are determined by relative positions of adjacent or removedquantized energy states of the photo-absorbing element, and applicabletransition-selection rules.

The broadband ArF-excimer laser emission spectrum ranges between 192.5and 194.0 nm, and is most intense between 193.0 and 193.6 nm. FIG. 5also shows molecular absorption lines of oxygen, known as theSchumann-Runge bands, within the broadband ArF-excimer laser spectrumaround 193 nm. Several of these absorption lines corresponding torotational and vibronic transitions of oxygen molecules are observedwithin the broadband ArF-laser emission spectrum. In addition, the maincarbon absorption line at 193.0905 nm is marked by “C” in the spectrumof FIG. 5.

FIG. 6 illustrates a method for tuning a narrowed emission band withinthe broadband spectrum of an excimer laser, using any embodiment of thelaser and laser wavelength calibration system of the present invention.The spectrum may be specifically produced using the system of FIG. 1b,or the system of FIG. 7, to be described later. A broadband emissionspectrum 41 is shown enveloping a broad range of wavelengths. Narrowedlines of emission 42-47 are shown within the broadband envelope 41. Asexpected, lines 42,44 and have reduced intensity from broadband 41values because they are spectrally located at wavelengths where theelement 21 is optically absorbing some of the laser intensity. Lines43,45 and 47 have the intensity corresponding to the broadband (41) gainsince the element 21 does not exhibit photo-absorption at thosewavelengths. That is, without oxygen absorption in the exemplary graphof FIG. 6, the amplitude of the ArF-laser would follow the gain curve ofthe broadband emission spectrum.

The absolute wavelengths of the lines 42, 44 and 46 are directlydeterminable from well-known group theoretical and quantum mechanicalcalculations and experimental measurements of the absorption line(s) ofthe photo-absorbing element 21. The absolute wavelengths of the lines43, 45 and 47 are indirectly determinable from a knowledge of thenearest absorption line(s) and the relative position of the line 43, 45or 47 located therebetween. For example, if line 45 were located halfwaybetween line 44, at _2, and line 46, at _3, then line 45 at_* would belocated at the absolute wavelength of _*=_2+_(_3−_2). Alternatively, ifthe gaseous element 21 has only one absorption line, e.g., line 44, thenthe absolute wavelength of line 45 is determinable from a knowledge ofthe wavelength of line 44 and spectral features of the broadband 41, andthe dispersion properties of the laser tuning element 5.

An ArF-excimer laser system including a wavelength calibration module asin FIGS. 1a and 1 b includes the following electrical and opticalcomponents. A main control unit 4 communicates electronically with amotor drive 6 for a line-narrowing and tuning block 5, as well as with adisplay 8. The main control unit 4 is either a standard PC or anespecially designed microprocessor unit for controlling the lasersystem.

The system further includes a signal processing and driving source 3 forthe wavelength calibration module 2. The signal processing and drivingsource 3 provides an electrical supply for the wavelength calibrationmodule 2. The signal processing and driving source further detectschanges in current through the galvatron when irradiated with narrowbandwidth radiation matching a transition line of the gaseous element21. These current changes can be quite small, and thus, precisioncircuitry is often used.

The display 8 receives its signal information from a wavelengthmonitoring component 7. The wavelength monitoring component 7 preferablyincludes a wavelength dispersion element and a photodetector. A typicallayout includes a monitor etalon, some lenses and a photo diode array,wherein the etalon fringe pattern is imaged onto the diode array. Whenthe wavelength of the laser is tuned by the motor drive 6, then thefringe pattern moves on the diode array and the wavelength shift can bemeasured.

On one end of the laser chamber 1, a light beam from the chamber 1impinges a first beam splitter 9 a which separates the beam into acomponent directed toward the line narrowing and tuning block 5, and acomponent which is unreflected. The line narrowing and tuning block isthe line narrowing part of the resonator. The beam splitter 9 a may be apolarizing beam splitter. The line narrowing and tuning block 5 cancomprise one or more prisms and a high reflectivity mirror, when linenarrowing to about 10 to 100 pm is desired. The line narrowing andtuning block 5 can comprise one or more prisms and a grating when linenarrowing to less than 10 pm is desired. For further line narrowing, theline narrowing and tuning block can comprise one or more etalons.

The beam splitter 9 a reflects some of the beam and most of the rest ofthe beam continues unreflected along the optical path. The unreflectedportion impinges a second beam splitter 9 b which separates theunreflected beam into a component directed toward the wavelengthmonitoring component 7, and a component which serves as the narrow bandoutput beam 12.

At the other end of the chamber 1, a beam emerges from the chamber 1 andimpinges a polarizer 13 and later impinges a resonator mirror 10. Thepreferred resonator of FIG. 1a is thus a polarization coupled resonatordesign. The polarizer 13 adjusts the polarization state of the laserradiation, which is particularly significant upon being directed ontothe beam splitter 9 a. The chamber 1 may also have one or more windowstilted at Brewster's angle with respect to the resonating beam.Alternatively, but not preferred, an output coupler may be used and, ifused, would be inserted between the beam splitters 9 a and 9 b.

In the preferred arrangement, the resonator mirror 10 reflects most ofthe beam, but allows a small portion to continue unreflected, either bytransmittance through the mirror 10 or by simply not impinging themirror 10. Typically in the transmission case, the mirror 10 has atransmittance in the range from 0.1 to 1%. Specifically, thetransmittance is preferably around 0.5%. The unreflected portioncontinues until it impinges the wavelength calibration tool 2.

Using this preferred arrangement, very precise absolute wavelengthcalibration can be performed. The calibration can be performed duringoperation of the system in its usual capacity, or during a short interimperiod between scheduled or unscheduled run times, without additionaloptical alignment, and may be performed at the factory.

Referring specifically to the system of FIG. 1a, an exemplarycalibration procedure using the system of FIG. 1a is as follows. First,a coarse tuning of a narrow band emission of the ArF-laser 1 by the maincontrol unit 4 is done via the spectral narrowing module 5, and themotor drive 6. The spectral narrowing module 5 is preferably a gratingand is used for coarse tuning of the wavelength of the system. Thewavelength position is observed by a wavelength monitoring module 7preferably including an etalon. The fringe pattern is displayed on thedisplay 8. Simultaneously, a signal of the potential difference betweenthe cathode 22 and the anode 23 of the galvatron 2 is monitored by thesignal processing unit 3. The main processing and data recording element4 communicates with the signal processing and driving source 3. When acoincidence of the wavelength of the narrowed spectral beam with one ofthe optical transition lines of the element 21 occurs, as discovered bya marked voltage increase, a fine tuning across the known waveform ofthe line proceeds for determining more precisely the absolute positionof the narrowed band. The position of the transition line correspondingto the spectral arrangement of the system, is recorded by the maincontrol unit 4 for future reference. The wavelength may be moved awayfrom the absorption line to a desired wavelength near the absorptionline using the wavelength monitoring module 7 including the monitoretalon, and the information about the position of the absorption linerelative to the fringe pattern produced by the etalon.

A modification in the design of the galvatron 2 can be performed whichserves to enhance the wavelength of, e.g. the carbon photo-absorptionline around 193.3 nm, shown in FIG. 3. The signal to noise ratio for thesystem may thus be enhanced by using special mixtures of buffer gasesand evaporized elements and/or special cathode materials. An enhancementof usual absorption signals of the galvatron and/or a rise of weakerlines situated nearer the middle of the tuning range could be expectedas seen in FIG. 8. With respect to FIG. 8, the carbon hollow cathodewithin the module used to obtain the spectrum is doped with oxides.

Alternatively, the arrangement of FIG. 1a may be modified to include aphotodetector 25 near the galvatron and located such that the portion oflaser light traversing the element 21, later impinges the photodetector.The preferred method is then modified using the embodiment of FIG. 1b,such that the voltage between the cathode 22 and the anode 23 are notmonitored. A current is only generated between the cathode 22 and anode23, if at all, to cause gaseous release of the solid element 21comprising the cathode 22. The photodetector 25 monitors the intensityof the light emitted from the ArF-laser chamber after it has traversedthe gaseous galvatron medium. At absorption lines of the gaseous species21, the absolute wavelength of the light is determinable. Further tothis alternative method, a hollow lamp may be filled with the gaseouselement 21 in another way than release from a cathode 22, thus obviatingthe need for the cathode 22 and anode 23. The galvatron of theembodiment of FIG. 1a is then modified to be a chamber filled with thegaseous element 21 and arranged along the excimer-laser beam pathbetween the discharge chamber 1 and the photodetector 25.

Referring to FIG. 7, a third embodiment of the present inventionincludes a tube or purge chamber 104 located along the beam path of thelaser which is purgeable with a gaseous photo-absorbing element 21 whichis preferably oxygen in this embodiment. Some hydrocarbon gases andhalogenized hydrocarbon gases may be used instead of oxygen. Also,carbon contamination wherein carbon traces are combined with an inertgas is also substitutable for the oxygen gas. This purge chamber 104 isusually part of the system when it is in operation. The chamber 104 is,however, purged with an inert gas such as preferably N_(2-gas) orAr-gas, and not O₂-gas, when the system is in operation. The inertpurging is performed to protect enclosed optical elements from corrosionand dust, and also, ironically, to avoid the very strong Schumann-RungeO₂-gas absorption which is so useful in performing absolute wavelengthcalibration. The purge chamber 104 is preferably only filled with O₂-gaswhen wavelength calibration is being performed. Using the purge chamber104 in this way is advantageous because no special unit need be added tothe laser system, or kept close by, for calibration purposes. This savesmoney and space within the laser housing as only a tank of oxygen needbe purchased and kept alongside the nitrogen tank in the laboratory.Valuable time is also saved because no complicated arrangement need beset up or taken down to perform absolute wavelength calibration of thesystem.

The beam intensity is monitored using a wavelength monitor module 106,including a monitor etalon and a CCD detector for diagnostics, whichmeasures decreased intensities corresponding to absorption lines of theelement 21. Since the wavelengths of absorption of the element 21 areknown or calculable, the absolute wavelength of emission of the lasersystem is precisely determinable. Oxygen may be used for this purpose asit is easily obtainable and storable in gaseous form, and the chamber104 may be easily purged with it. Also, oxygen has multiple absorptionlines within the broadband emission spectrum of FIG. 5, furtherfacilitating wavelength determination. Again, another absorbing gaseousspecies such as a hydrocarbon gas, or a quasi-transparent solid orliquid cell may also be placed along the optical path if it has one ormore absorption lines within the broadband spectrum of FIG. 3.Wavelength tuning is performed at the opposite end of the laser chamber101 by a line narrowing block 102 including a dispersive element and aretroreflector.

A preferred arrangement of this third embodiment is shown in FIG. 7. Itshould be noted that a system of the third embodiment can include any ofvarious laser systems, excimer or otherwise. Appropriate selection ofpurge gases is performed depending on the particular laser emissionwavelength involved.

An ArF-excimer laser chamber 101 is shown in FIG. 7, emitting around 193nm. A beam exits the chamber 101 at a first end and enters the purgechamber 104. The preferred purge chamber 104 is shown in FIG. 7partially inside and partially outside of the laser resonator defined byelements 102 and 103. Alternatively, the purge chamber 104 may beexternal to the laser resonator. The purge chamber 104 may also beintracavity, or inside the laser resonator.

During a calibration process, the purge chamber 104 is filled with aphoto-absorbing gas, e.g., O₂, that has at least one absorption linearound 193 nm. During normal operation, the purge chamber is back-filledwith N₂ gas to enable stable laser operation. Access to the purgechamber 104 by the N₂-gas and the O₂-gas tanks is separately controlledby valves 110 a and 110 b, respectively.

The beam impinges an output coupler 103 which reflects a large part ofthe intensity of the beam back along the optical path into the chamber101. A portion of the beam incident on the output coupler 103 istransmitted and impinges a first beam splitter 105 a. A portion of thisbeam is reflected and a portion is transmitted. The transmitted portionis the output beam 111 of the system. The portion of the beam reflectedfrom the beam splitter 105 a, is incident on a second beam splitter 105b. A component reflected from the second beam splitter is monitored byan energy monitor 107. Another component transmitted through the secondbeam splitter 105 b enters a wavelength monitor module 106 including amonitor etalon and CCD diagnostics. The wavelength monitor module 106communicates with a main processing and data acquisition unit 108.

A beam emerges from a second end of the laser chamber 101 opposite thefirst end from which the beam exits the laser chamber 101 and enters thepurge chamber 104. This beam which exits the laser chamber 101 from thesecond end and impinges a line narrowing and tuning block 102 includingdispersive elements and a retroreflector. The line narrowing and tuningblock 102 is preferably a prism-dielectric mirror combination or aprism-grating combination. The prism dielectric mirror combination canbe realized by two independent components or a back surface coatedprism. In a preferred embodiment, a front surface of the prism isarranged at Brewster's angle to the incident beam. A motor drive 109 forwavelength tuning controls the dispersion angle of the prism, mirror orgrating.

FIG. 9 illustrates a variation of either of the techniques describedabove with respect to FIGS. 1a and 1 b. FIG. 9 shows the beam portionused for absolute wavelength calibration being diverted from the mainbeam using a beam splitter BS1. The beam splitter BS1 reflects a smallportion of the intensity of the main beam toward the calibration module,including the photoabsorbing gas as described above.

A variation of the techniques described above with respect to FIGS. 1a,1 b and 9 is the following. Instead of using the optogalvanic effect, ormeasuring the absorption through the gas of the module using, e.g., aphotodiode or photomultiplier tube, a microphone for photoacousticdetection may be used. The rest of the preferred method and apparatus isthe same as described above.

In addition, when the photoabsorption intensity is generally low, suchas when a weak absorption line is used in any of the above techniques,the beam portion may be directed to pass through the gas of thecalibration module 2 more than once, such as by an arrangement ofmirrors and/or beam splitters BS1-BS5 such as are shown in FIG. 10. Anyof optogalvanic, photoabsorption and photoacoustic detection techniquesdescribed above may be performed using this technique to enhance thedetected signal intensity. When the photoabsorption technique is used, aportion of the split off beam can be output to a detector 25_positionednot to interfere with the cycling beam. Of course a processor receivesthe optogalvanic, photoabsorption or photoacoustic detection informationand controls the laser wavelength accordingly.

The specific embodiments described in the specification, drawings,summary of the invention and abstract of the disclosure are not intendedto limit the scope of any of the claims, but are only meant to provideillustrative examples of the invention to which the claims are drawn.The scope of the present invention is understood to be encompassed bythe language of the claims, and structural and functional equivalentsthereof.

What is claimed is:
 1. A molecular fluorine laser system, comprising: adischarge chamber and a resonator and generating a narrow band outputbeam around 157 nm of a known absolute wavelength; a wavelengthselection and tuning unit for selecting one of multiple closely-spacedcharacteristic molecular fluorine emission lines around 157 nm byoptically suppressing non-selected lines of the multiple closely-spacedcharacteristic molecular fluorine emission lines, and for tuning acentral wavelength of the narrow band output beam from the laser withinthe selected line; a wavelength calibration module permitting thewavelength of the narrow band output beam to be calibrated to a specificwavelength standard, said module coming at least one species foroptically interacting with a beam portion in a region around 157 nm, formeasuring effects of interaction of the beam portion with The at leastone species when the narrow band output beam is scanned; a wavelengthmonitoring module for turning the wavelength to a desired wavelengthafter calibrating the wavelength monitoring module to the specificwavelength standard with the wavelength calibration module; and aprocessor for calibrating the wavelength of the narrow band output beambased on the measured effects of the interaction of the at least onespecies with the component of the output beam, and for controlling thetuning of the wavelength to the desired wavelength by controlling thewavelength selection and tuning unit according to information receivedfrom the wavelength monitoring module which is calibrated to theabsolute wavelength standard, such that the wavelength is moved awayfrom an interaction wavelength with the absolute wavelength standardbased on information received from the wavelength monitoring module asthe wavelength is Tuned to the desired wavelength within the selectedline of the multiple closely-spaced characteristic molecular fluorineemission lines around 157 nm.
 2. The laser system of claim 1, whereinsaid module further contains an inert gas.
 3. The laser system of claim1, wherein said electronics include a photodetector for measuring anintensity of the output beam after the output beam traverses a volume ofthe module including the optically interacting species.
 4. The lasersystem of claim 1, wherein said electronics includes a galvanometer formeasuring a potential difference between two points separated by avolume of material including the optically interacting species fillingthe module.
 5. The laser system of claim 1, wherein the module is agalvatron.
 6. The laser system of claim 5, wherein said electronicsinclude a photodetector for measuring an intensity of the output beamafter the output beam traverses the material including the opticallyinteracting species filling the galvatron.
 7. The laser system of claim5, wherein a current is flowed between the anode and the cathode tocause material of the cathode to fill the galvatron in gaseous form. 8.The laser system of claim 5, wherein said electronics measure aphtotabsorption by said species of said beam portion.
 9. The lasersystem of claim 1, wherein said module is external to said resonator.10. The laser system of claim 1, wherein said module is within saidresonator.
 11. The molecular flue laser system of claim 1, wherein theat least one species includes one or more species selected from thegroup consisting of selenium and silicon.
 12. The molecular fluorinelaser system of claim 11, wherein the group of species further consistsof bromine.
 13. The laser system of claim 11, wherein said modulefurther contains an inert gas.
 14. The laser system of claim 11, whereinsaid laser system further includes a photodetector for measuring anintensity of the output beam after the output beam traverses a volume ofthe module including the optically interacting species.
 15. The lasersystem of claim 14, wherein said photodetector measure a phtotabsorptionby said species of said beam portion.
 16. The laser system of claim 11,wherein said laser system further includes a galvanometer for measuringa potential difference between two points separated by a volume ofmaterial including the optically interacting species filling the module.17. The laser system of claim 11, wherein the module is a galvatron. 18.The laser system of claim 17, wherein said electronics include aphotodetector for measuring an intensity of the output beam after theoutput beam traverses the material including the optically interactingspecies filling the galvatron.
 19. The laser system of claim 17, whereina current is flowed between an anode and a cathode of said galvatron tocause material of the cathode to fill the galvatron in gaseous form. 20.The laser system of claim 11, wherein said module is external to saidresonator.
 21. The laser system of claim 11, wherein said module iswithin said resonator.
 22. The molecular fluorine laser system of claim1, said module containing a species having a plurality of opticaltransition lines with the emission spectrum of said molecular fluorinelaser system for optically interacting with a beam portion in a regionaround 157 nm, said laser system being configured to measure effects ofinteraction of the species with he beam portion as the wavelength of thenarrow baud output beam is scanned through the plurality of opticaltransition lines.
 23. The molecular fluorine laser system of claim 22,wherein the species having said optical transition around 157 nmincludes at least one species selected from the group of speciesconsisting of selenium and silicon.
 24. The molecular fluorine lasersystem of claim 22, wherein the species having said optical transitionaround 157 nm includes at least one species selected from the group ofspecies consisting of selenium, bromine and silicon.
 25. The method ofclaim 22, wherein said species includes at least one species selectedfrom the group of species consisting of selenium, platinum and silicon.26. A method for determining the absolute wavelength of a narrowedspectral emission around 157 nm of a narrow band laser system includinga wavelength selection and tuning unit for selecting one of multipleclosely-spaced characteristic molecular fluorine emission lines around157 nm by optically suppressing non-selected lines of The multipleclosely-spaced characteristic molecular fluorine emission lines, and fortuning a central wavelength of the arrow band output beam from the laserwithin the selected line, a wavelength calibration system including amodule containing a medium including at least one optically interactingspecies having one or more optical transition lines within the emissionspectrum of said laser, and a wavelength monitoring module calibrated tothe one or more optical transition lines of the medium contained withinsaid module of said wavelength calibration system, comprising the stepsof: providing a narrow band output laser beam around 157 nm from saidlaser system; directing said output beam through the module includingsaid optically interacting species; detecting at least one of theoptical transition lines when the narrowed emission is tuned within theemission spectrum of the laser; determining the absolute wavelength ofthe narrowed emission at at least one tuning position corresponding o atleast one of the one or more optical transition lines based on the atleast one detected transition; calibrating the wavelength monitoringmodule based on the absolute wavelength determination; and tuning thewavelength of the narrowed spectral emission to a desired wavelength bycontrolling the wavelength selection and tuning unit according toinformation received from the wavelength monitoring module which iscalibrated to the absolute wavelength standard, such that the wavelengthis moved away from an interaction wavelength with the absolutewavelength standard based on information received from the wavelengthmonitoring module as the wavelength is tuned to the desired wavelengthwithin the selected line of the multiple closely-spaced characteristicmolecular fluorine emission lines around 157 nm.
 27. The method of claim26, wherein said optically interacting species includes selenium. 28.The method of claim 26, wherein the optically interacting speciesincludes bromine.
 29. A method of claim 26, wherein the opticallyinteracting species includes silicon.
 30. The method of claim 26,wherein the detecting step includes detecting a plurality of opticaltransition lines when the narrowed emission is tuned within the emissionspectrum of the laser.
 31. The method of claim 30, wherein saidoptically interacting species includes selenium.
 32. The method of claim30, wherein the optically interacting species includes bromine.
 33. Amethod of claim 3, wherein the optically interacting species includessilicon.
 34. The method of claim 26, wherein said species includes atleast one species selected from ale group of species consisting ofselenium and silicon.
 35. The method as in claim 34, the group ofspecies further consisting of bromine.
 36. The method of claim 26,wherein said species having said at least one optical inter-leveltransition within the broadband emission spectrum of said excimer laseris platinum.
 37. The method of claim 26, wherein said species includesat least one species selected from the group of species consisting ofselenium, silicon, platinum bromine.
 38. A method for determining theabsolute wavelength of a narrowed spectral emission of a narrow band gasdischarge laser system including a gas mixture comprising molecularfluorine, a wavelength selection and tuning unit for selecting one ofmultiple closely-spaced characteristic molecular fluorine emission linesaround 157 nm by optically suppressing non-selected lines of themultiple closely-spaced characteristic molecular fluorine: emissionlines, and for tuning a central wavelength of the narrow band outputbeam from the laser within the selected line, a wavelength calibrationsystem including a module containing a medium including an opticallyinteracting species having an optical transition line within theemission spectrum of said laser, and a wavelength monitoring modulecalibrated to the one or more optical transition lines of the mediumcontained within said module of said wavelength calibration system,comprising the steps of: providing a narrow band output laser beam fromsaid excimer or molecular fluorine laser system; directing said outputbeam through the module including said optically interacting species;detecting the optical transition line when the narrowed emission istuned within the emission spectrum of the laser; and determining theabsolute wavelength of the narrowed emission based on the detectedtransition; calibrating the wavelength monitoring module based on theabsolute wavelength determination; and tuning the wavelength of thenarrowed spectral emission to a desired wavelength by controlling thewavelength selection and tuning unit according to information receivedfrom the wavelength monitoring module which is calibrated to theabsolute wavelength standard, such that the wavelength is moved awayfrom an interaction wavelength with The absolute wavelength standardbased on information received from the wavelength monitoring module asthe wavelength is tuned to the desired wavelength with the selected lineof the multiple closely-spaced characteristic molecular fluorineemission lines around 157 nm, and wherein said optically interactingspecies includes platinum.
 39. The method of claim 38, wherein thedetecting step comprises detecting a plurality of optical transitionlines when The narrowed emission is tuned within the emission spectrumof the laser.
 40. The laser system of claim 38, wherein said modulefurther contains an inert gas.
 41. The laser system of claim 40, whereinsaid inert gas includes neon.
 42. The laser system of claim 38, furthercomprising a photodetector for measuring an intensity of the output beamafter the output beam traverses a volume of the module including theoptically interacting species.
 43. The laser system of claim 38, furthercomprising a galvanometer for measuring a potential difference betweentwo points separated by a volume of material including the opticallyinteracting species filling the module.